Ingots:

No crack, edge, crater on the ingot exterior
Conductance Type: P
Pulled Ingot Orientation : 〈100〉± 30
Receptivity: 0.5-3Ω.cm
Diameter: 153mm
Length≥100mm, depend on customers
Minority Carrier Life Time: ≥ 10 μ s
Oxygen: ≤1.0 × 1018atoms/cm3
Carbon: ≤20 × 1016atoms/cm3
Etching Pit≤3000pcs/ cm2

3. Products Application:

Use for the high efficiency cells production
High efficiency solar cells are ensured by the Shenglong solar production process
An extensive quality system is used to ensure wafers meet customers’ requirements for high efficiency. Characterization procedures provide continual control and monitoring of critical wafer parameters such as
Thickness

TTV
Receptivity
Minority carrier lifetime