Products
Product Introduction
Ingots & Wafers
Monocrystalline solar module
  125 Series
Ingots & Wafers

Ingots:

No crack, edge, crater on the ingot exterior
Conductance Type: P
Pulled Ingot Orientation : 〈100〉± 30
Receptivity: 0.5-3Ω.cm
Diameter: 153mm
Length≥100mm, depend on customers
Minority Carrier Life Time: ≥ 10 μ s
Oxygen: ≤1.0 × 1018atoms/cm3
Carbon: ≤20 × 1016atoms/cm3
Etching Pit≤3000pcs/ cm2

Wafers:
1. Outline Dimension

1.1 Wafer Diameter :150 土0.5mm
1.2 Thickness :210 土20 μm
1.3 Dimensions Tolerance: 125土0.5mm
1.4 TTV :≤0.03mm

2. Technical parameter
2.1 Conductance Type: P
2.2 Receptivity: 0.5-3Ω.cm
2.3 Minority Carrier Life Time : ≥ 10 μ s
2.4 Oxygen : ≤1.0 × 1018atoms/cm3
2.5 Carbon : ≤20 × 1016atoms/cm3
2.6 Pulled Ingot Orientation : 〈100〉± 1.50
2.7 TTV : ≤3000 pcs /cm2

3. Products Application:

Use for the high efficiency cells production
High efficiency solar cells are ensured by the Shenglong solar production process
An extensive quality system is used to ensure wafers meet customers’ requirements for high efficiency. Characterization procedures provide continual control and monitoring of critical wafer parameters such as
Thickness

TTV
Receptivity
Minority carrier lifetime

 
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